The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact
The electronic structure of the interface between the boron-doped oxygenated amorphous
silicon “window layer”(a-SiO x: H (B)) and aluminum-doped zinc oxide (ZnO: Al) was
investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-
doped microcrystalline silicon (μc-Si: H (B))/ZnO: Al interface. The corresponding valence
band offsets have been determined to be (− 2.87±0.27) eV and (− 3.37±0.27) eV,
respectively. A lower tunnel junction barrier height at the μc-Si: H (B)/ZnO: Al interface …
silicon “window layer”(a-SiO x: H (B)) and aluminum-doped zinc oxide (ZnO: Al) was
investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-
doped microcrystalline silicon (μc-Si: H (B))/ZnO: Al interface. The corresponding valence
band offsets have been determined to be (− 2.87±0.27) eV and (− 3.37±0.27) eV,
respectively. A lower tunnel junction barrier height at the μc-Si: H (B)/ZnO: Al interface …
The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact
The electronic structure of the interface between the boron-doped oxygenated amorphous
silicon “window layer”(a-SiOx: H (B)) and aluminum-doped zinc oxide (ZnO: Al) was
investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-
doped microcrystalline silicon (μc-Si: H (B))/ZnO: Al interface. The corresponding valence
band offsets have been determined to be (− 2.87±0.27) eV and (− 3.37±0.27) eV,
respectively. A lower tunnel junction barrier height at the μc-Si: H (B)/ZnO: Al interface …
silicon “window layer”(a-SiOx: H (B)) and aluminum-doped zinc oxide (ZnO: Al) was
investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-
doped microcrystalline silicon (μc-Si: H (B))/ZnO: Al interface. The corresponding valence
band offsets have been determined to be (− 2.87±0.27) eV and (− 3.37±0.27) eV,
respectively. A lower tunnel junction barrier height at the μc-Si: H (B)/ZnO: Al interface …
以上显示的是最相近的搜索结果。 查看全部搜索结果