The study of Ga+ FIB implanting crystal silicon and subsequent annealing
The FIB Ga+ irradiation damage on Si substrate under different ion dose ranging from 1013
ions· cm− 2 to 1017 ions· cm− 2 and its effective recovery were studied. Based on the
characterization results of XPS depth profiles, Raman, electron microscopy and AFM, FIB
Ga+ implantation and the damage's evolution and recovery after annealing treatment have
been comprehensively demonstrated. The concentration distribution of implanted Ga was
changed with ion doses and the peak of Ga concentration moved to the surface as the ion …
ions· cm− 2 to 1017 ions· cm− 2 and its effective recovery were studied. Based on the
characterization results of XPS depth profiles, Raman, electron microscopy and AFM, FIB
Ga+ implantation and the damage's evolution and recovery after annealing treatment have
been comprehensively demonstrated. The concentration distribution of implanted Ga was
changed with ion doses and the peak of Ga concentration moved to the surface as the ion …
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