The third-order nonlinear optical coefficients of Si, Ge, and Si1− xGex in the midwave and longwave infrared
Using a combination of semiconductor theory and experimental results from the scientific
literature, we have compiled and plotted the key third-order nonlinear optical coefficients of
bulk crystalline Si and Ge as a function of wavelength (1.5− 6.7 μm for Si and 2–14.7 μm for
Ge). The real part of third-order nonlinear dielectric susceptibility (χ (3)′), the two-photon
absorption coefficient (β TPA), and the Raman gain coefficient (g R), have been
investigated. Theoretical predictions were used to curve-fit the experimental data. For a …
literature, we have compiled and plotted the key third-order nonlinear optical coefficients of
bulk crystalline Si and Ge as a function of wavelength (1.5− 6.7 μm for Si and 2–14.7 μm for
Ge). The real part of third-order nonlinear dielectric susceptibility (χ (3)′), the two-photon
absorption coefficient (β TPA), and the Raman gain coefficient (g R), have been
investigated. Theoretical predictions were used to curve-fit the experimental data. For a …
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