The zero temperature coefficient in junctionless nanowire transistors
This Letter presents an analysis of the zero temperature coefficient (ZTC) bias in junctionless
nanowire transistors (JNTs). Unlike in previous works, which had shown that JNT did not
present a ZTC point, this work shows that ZTC may occur in JNTs depending mainly on the
series resistance of the devices and its dependence on the temperature. Experimental
results of drain current, threshold voltage, and series resistance are presented for both long
and short channel n and p-type devices.
nanowire transistors (JNTs). Unlike in previous works, which had shown that JNT did not
present a ZTC point, this work shows that ZTC may occur in JNTs depending mainly on the
series resistance of the devices and its dependence on the temperature. Experimental
results of drain current, threshold voltage, and series resistance are presented for both long
and short channel n and p-type devices.
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