Theory of effective g-factors in ternary semiconductors: application to Pb1-xSnxTe
RL Hota, GS Tripathi - Journal of Physics: Condensed Matter, 1991 - iopscience.iop.org
The effective g-factor, obtained from the spin contribution to the Knight shift, is calculated
from first principles for ternary semiconductors and applied to Pb 1-x Sn x Te. A six-level k. pi
theory, within the framework of the effective-mass representation, is used to calculate the
effective g-factor as a function of carrier density, tin concentration and temperature. The
temperature and concentration dependence of the energy gap is used via the virtual-crystal
approximation. The agreement with the available experiments is good, and the trends and …
from first principles for ternary semiconductors and applied to Pb 1-x Sn x Te. A six-level k. pi
theory, within the framework of the effective-mass representation, is used to calculate the
effective g-factor as a function of carrier density, tin concentration and temperature. The
temperature and concentration dependence of the energy gap is used via the virtual-crystal
approximation. The agreement with the available experiments is good, and the trends and …
Theory of effective g-factors in ternary semiconductors: application to Pb1-xSnxTe
H RL - 1991 - arch.neicon.ru
The effective g-factor, obtained from the spin contribution to the Knight shift, is calculated
from first principles for ternary semiconductors and applied to Pb< sub> 1-x Sn< sub> x Te. A
six-level k. pi theory, within the framework of the effective-mass representation, is used to
calculate the effective g-factor as a function of carrier density, tin concentration and
temperature. The temperature and concentration dependence of the energy gap is used via
the virtual-crystal approximation. The agreement with the available experiments is good, and …
from first principles for ternary semiconductors and applied to Pb< sub> 1-x Sn< sub> x Te. A
six-level k. pi theory, within the framework of the effective-mass representation, is used to
calculate the effective g-factor as a function of carrier density, tin concentration and
temperature. The temperature and concentration dependence of the energy gap is used via
the virtual-crystal approximation. The agreement with the available experiments is good, and …
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