… the present invention generally relates to the preparation of semiconductor material
substrates, especially silicon wafers, which are used in the manufacture of electronic
components. More particularly, the present invention relates to a process for thermally
treating or annealing a silicon wafer to reduce the concentration of agglomerated vacancy
defects without substantially increasing the appearance of haze on the surface of the
thermally treated silicon wafer. … the present invention is directed to a process for …