Abstract Lattice-mismatched Al 1-x In x N layers grown on GaN and with varying x are
thermally oxidized to understand how alloy content affects the oxidation process and oxide
films. The samples are oxidized in a horizontal tube furnace at 830 o C and 900 o C for 2 h
under O 2. The samples are characterized using atomic force microscopy to determine root
mean square roughness before and after oxidation. The oxide thickness for each sample is
determined by spectroscopic ellipsometry. The AlInN layers with less indium produce …