Thermal resistance of double heterostructure separate confinement GaAs\,/AlGaAs semiconductor lasers in stripe geometry configuration
The behavior of a laser diode is affeeted by an inerease of temperatnre within its volume
during operation, whieh is determined by the value of the thermal resistan ce of the device.
In this paper the dependen ce of this magnitude on different deviee parameters is ealculated
for a double heterostrueture separate eonfinement stripe geometry GaAsj AlGaAs lasers. For
this purpose the heat eonduetion equation was solved. The boundary eonditions for this
problem were derived taken into aeeount different meehanisms of heat extraetion from the …
during operation, whieh is determined by the value of the thermal resistan ce of the device.
In this paper the dependen ce of this magnitude on different deviee parameters is ealculated
for a double heterostrueture separate eonfinement stripe geometry GaAsj AlGaAs lasers. For
this purpose the heat eonduetion equation was solved. The boundary eonditions for this
problem were derived taken into aeeount different meehanisms of heat extraetion from the …
Resumen
La operación de un láser semiconductor se ve afectada por un incremento de la temperatura en su interior durante su funcionamiento, el cual está determinado por el valor de su resistencia térmica R. En el presente artículo, se calcula la dependencia de esta magnitud de diferentes parámetros del dispositivo en lásercs semiconductores de doble heterojuntura y confi-namiento separado de portadores y fotones con base en el sistema GaAs/AlGaAs con contacto de franja. Se realiza un estudio detallado de la influencia de estos parámetros sobre el valor de R.
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