Three-step densification of monolithic SiC ceramics by spark plasma apparatus without sintering additives
In the present work, three-step spark plasma sintering of monolithic SiC ceramics was
investigated using commercially available SiC powder, without the addition of any sintering
aids. A relative density of up to 97.1% was achieved by dwelling at a moderately high
temperature of 1700° C for 1 h. Results indicate that the material׳ s density increased with
increasing dwell time at 1700° C. The combination of novel sintering profile, crystal lattice
distortion, and the advantages inherent to SPS all contributed to the densification …
investigated using commercially available SiC powder, without the addition of any sintering
aids. A relative density of up to 97.1% was achieved by dwelling at a moderately high
temperature of 1700° C for 1 h. Results indicate that the material׳ s density increased with
increasing dwell time at 1700° C. The combination of novel sintering profile, crystal lattice
distortion, and the advantages inherent to SPS all contributed to the densification …
Abstract
In the present work, three-step spark plasma sintering of monolithic SiC ceramics was investigated using commercially available SiC powder, without the addition of any sintering aids. A relative density of up to 97.1% was achieved by dwelling at a moderately high temperature of 1700 °C for 1 h. Results indicate that the material׳s density increased with increasing dwell time at 1700 °C. The combination of novel sintering profile, crystal lattice distortion, and the advantages inherent to SPS all contributed to the densification mechanisms.
Elsevier
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