Elastic recoil detection analysis, using an incident beam of 200 MeV Au ions, has been used
to measure indium nitride films grown by radio-frequency sputtering. It is shown that the …

Metallic gallium was observed on the surfaces of GaN commercial samples following argon
ion milling. SIMS measurements confirmed that the commercial GaN had approximately 0.02…

The band-gap of indium nitride has long been believed to be about 1.9eV with slight variations
due to band-tailing in polycrystalline samples and degenerate doping. Recently, other …

It is shown that the wide variation of apparent band‐gap observed for thin films nominally
referred to as InN is strongly influenced by variations in the nitrogen:indium stoichiometry. InN …

We have observed an “above band-gap” Urbach like characteristic for gallium nitride films (at
the high energy side of the band-edge). A combination of X-ray diffraction, secondary ion …

The properties of indium nitride grown at various temperatures on c-plane sapphire and
glass substrates, using remote plasma-enhanced chemical vapour deposition, have been …

Because of its high mobility, indium nitride is emerging as a “hot” material for potential application
in nitride based high power, high frequency transistor devices. The best quality indium …

… to both GaN and GaAs over a wide temperature range from 150 to 500 K. The early work
of Tansley and Foley confirmed the potential of indium nitride, with the demonstration of high …