… manufactured in a 28 nm high-k commercial CMOS technology up to 1 Grad. Both nMOSFET
… This work is relevant as the evaluation of a new generation of CMOS technologies to be …

… manufactured in a 28 nm high-k commercial CMOS technology up to 1 Grad. Both nMOSFET
… This work is relevant as the evaluation of a new generation of CMOS technologies to be …

… ultrahigh total ionizing doses (TIDs) up to 1 Grad(SiO2) over … Research on total dose effects
at these ultrahigh doses has … based 65-nm CMOS technology was studied up to 1 Grad(SiO2)…

… , where total ionizing dose (TID) of 1 Grad ( SiO 2 ) and 1 0 16 … DD effects in transistors in
a 28 nm CMOS technology through … degradation is mainly due to TID effects rather than DD. …

… In this work, the impact of the device variability on total dose effects in the 16-… Mattiazzo et
al., “Total ionizing dose effects on a 28 nm Hi-K metalgate CMOS technology up to 1 Grad,” J. …

… the transistor as CMOS technologies move into 28 nm and below. … STI and metal-gate process
with high-k gate dielectric are … “1-grad total dose evaluation of 65 nm CMOS technology for …

… The radiation effects world was very new to me when I … and into the life of a graduate student.
A lot changed over the … vacancy traps in Hi-K/Metal gate technologies and their potential …

… -k-metal-gate (HKMG) devices for use as memory elements [1]. … Most advanced CMOS
technologies already use HfO2 in the … Ultra-high doses of up to 1 Grad(SiO2) were achieved, and …

… failures while both were attributed to ionization effects [3]. … and their ionizing products (fluxes
of gamma and X-rays) gradually … Our focus will be on the effects of ionizing radiation and …

… its electronics to ultrahigh total ionizing doses (TIDs) up to 1 Grad (SiO2) over ten years of
operation [1]. Such levels of … [28] DM Fleetwood, “Total ionizing dose effects in MOS and low-…