transistors and RF switches. An embedded gate structure was used to fabricate short
channel CVD Mos 2 Rf FETs with an intrinsic f T of 20 GHz, intrinsic f max of 11.4 GHz, and
the high-field saturation velocity V sat of 1.88× 10 6 cm/s. The gate-first process allows for
enhancement mode operation, ION/IOFF ratio of 10 8, and a transconductance (gm) of 70
μS/μm. Also, we use a vertical MIM structure for a RF switch based on CVD Mos 2. The …