We present a safe and cost-effective approach for synthesis of n-type Sb-doped Si
nanowires. The nanowires were synthesized at ambient pressure using SiCl4 as Si source
and pure Sb as the dopant source. Structural and compositional characterization using
electron microscopy and X-ray spectroscopy show crystalline nanowires with lengths of 30–
40μm and diameters of 40–100nm. A 3–4nm thick amorphous oxide shell covers the surface
of the nanowire, post-growth. The composition of this shell was confirmed by Raman …