Tunneling leakage in ultrashort-channel MOSFETs—From atomistics to continuum modeling
RJ Prentki, M Harb, C Zhou, P Philippopoulos… - Solid-State …, 2022 - Elsevier
The channel lengths of transistors are now nearing the nanometer, making these devices
increasingly prone to direct source-to-drain tunneling (DSDT), a leakage mechanism
commonly considered to set the end of Moore's law. In MOSFETs, the probability for a
charge carrier to undergo DSDT decays exponentially with channel length, source depletion
length, and drain depletion length. Bound-charge engineering (BCE) is a recently
introduced scheme where the depletion lengths of FETs can be controlled through effective …
increasingly prone to direct source-to-drain tunneling (DSDT), a leakage mechanism
commonly considered to set the end of Moore's law. In MOSFETs, the probability for a
charge carrier to undergo DSDT decays exponentially with channel length, source depletion
length, and drain depletion length. Bound-charge engineering (BCE) is a recently
introduced scheme where the depletion lengths of FETs can be controlled through effective …