Tunnelling transport in Al-n-GaSb Schottky diodes
A Subekti, TL Tansley… - IEEE Transactions on …, 1998 - ieeexplore.ieee.org
Investigations of Al Schottky contacts to n-GaSb are presented. Barrier heights of 0.60/spl
plusmn/0.02 eV are found. Forward bias ideality factors between 2 at 300 K to 60 at 10 K,
are explained by electron tunneling. Ideality factors yield donor concentrations significantly
greater than nominal, accentuated by annealing, suggesting modification of the reactive
GaSb surface.
plusmn/0.02 eV are found. Forward bias ideality factors between 2 at 300 K to 60 at 10 K,
are explained by electron tunneling. Ideality factors yield donor concentrations significantly
greater than nominal, accentuated by annealing, suggesting modification of the reactive
GaSb surface.
Investigations of Al Schottky contacts to n-GaSb are presented. Barrier heights of 0.60/spl plusmn/0.02 eV are found. Forward bias ideality factors between 2 at 300 K to 60 at 10 K, are explained by electron tunneling. Ideality factors yield donor concentrations significantly greater than nominal, accentuated by annealing, suggesting modification of the reactive GaSb surface.
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