Ultra low density of CdTe quantum dots grown by MBE
This work presents methods of controlling the density of self-assembled CdTe quantum dots
(QDs) grown by molecular beam epitaxy. Two approaches are discussed: increasing the
deposition temperature of CdTe and the reduction of CdTe layer thickness.
Photoluminescence (PL) measurements at low temperature confirm that both methods can
be used for significant reduction of QDs density from 10 10 QD/cm 2 to 10 7–10 8 QD/cm 2.
For very low QDs density, identification of all QDs lines observed in the spectrum is possible.
(QDs) grown by molecular beam epitaxy. Two approaches are discussed: increasing the
deposition temperature of CdTe and the reduction of CdTe layer thickness.
Photoluminescence (PL) measurements at low temperature confirm that both methods can
be used for significant reduction of QDs density from 10 10 QD/cm 2 to 10 7–10 8 QD/cm 2.
For very low QDs density, identification of all QDs lines observed in the spectrum is possible.
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