Ultrathin Films of VO2 on r-Cut Sapphire Achieved by Postdeposition Etching
T Yamin, S Wissberg, H Cohen… - … applied materials & …, 2016 - ACS Publications
The metal–insulator transition (MIT) properties of correlated oxides thin films, such as VO2,
are dramatically affected by strain induced at the interface with the substrate, which usually
changes with deposition thickness. For VO2 grown on r-cut sapphire, there is a minimum
deposition thickness required for a significant MIT to appear, around 60 nm. We show that in
these thicker films an interface layer develops, which accompanies the relaxation of film
strain and enhanced electronic transition. If these interface dislocations are stable at room …
are dramatically affected by strain induced at the interface with the substrate, which usually
changes with deposition thickness. For VO2 grown on r-cut sapphire, there is a minimum
deposition thickness required for a significant MIT to appear, around 60 nm. We show that in
these thicker films an interface layer develops, which accompanies the relaxation of film
strain and enhanced electronic transition. If these interface dislocations are stable at room …
[引用][C] Ultrathin Films of VO2 on r-Cut Sapphire Achieved by Postdeposition Etching
Y Tony, W Shai, C Hagai, CT Gili, S Amos - 2016
以上显示的是最相近的搜索结果。 查看全部搜索结果