assisted molecular beam epitaxy without any buffer layers at low temperatures of around
320 C. By adjusting the Ga/In flux ratio, InGaN layers with In compositions between 10 and
33% are obtained, providing emission covering the whole visible spectral range. The In
composition varies less than 2% over large areas, and the single-crystalline hexagonal
InGaN layers have a well-defined epitaxial relationship with the Si substrate …