Valley-related multiple Hall effect in monolayer

X Feng, X Xu, Z He, R Peng, Y Dai, B Huang, Y Ma - Physical Review B, 2021 - APS
Physical Review B, 2021APS
Two-dimensional materials with valley-related multiple Hall effect are both fundamentally
intriguing and practically appealing for exploring novel phenomena and applications, but
have been largely overlooked to date. Here, using first-principles calculations, we show that
the valley-related multiple Hall effect can exist in single-layer V Si 2 P 4. We identify single-
layer V Si 2 P 4 as a ferromagnetic semiconductor with out of plane magnetization and
valley physics. Arising from the joint effect of inversion symmetry breaking and time-reversal …
Two-dimensional materials with valley-related multiple Hall effect are both fundamentally intriguing and practically appealing for exploring novel phenomena and applications, but have been largely overlooked to date. Here, using first-principles calculations, we show that the valley-related multiple Hall effect can exist in single-layer . We identify single-layer as a ferromagnetic semiconductor with out of plane magnetization and valley physics. Arising from the joint effect of inversion symmetry breaking and time-reversal symmetry breaking, the exotic spontaneous valley polarization occurs in single-layer , thus facilitating the observation of anomalous valley Hall effect. Moreover, under external strain, band inversion can occur at only one of the valleys of single-layer , enabling the long-sought valley-polarized quantum anomalous Hall effect, and meanwhile the anomalous valley Hall effect is well preserved. Our work not only enriches the research on valley-related multiple Hall effect, but also provides an ideal platform for exploring valley-polarized quantum anomalous Hall effect.
American Physical Society
以上显示的是最相近的搜索结果。 查看全部搜索结果