Ionizing radiations pose risks to Integrated Circuits (ICs) in space devices and nuclear reactors, but their effects are mitigated by specific designs and redundancy. Besides characterizing radiation faults, X-rays can be intentionally used to modify IC behavior. This study demonstrates inducing semi-permanent faults in 28 nm technology node transistors using a 50-nm nanoprobe beam from the European Synchrotron Radiation Facility. Precise X-ray flux control enables targeted perturbation of transistors without invasive attacks, expanding applications to circuit edits and fault attacks. Cheaper and more accessible X-ray beams enable inducing similar effects, though on older technologies for the moment.