X-ray photoelectron spectroscopic study of KrF excimer laser nitrided InP surface
T Akane, K Sugioka, K Midorikawa… - Journal of Applied …, 2001 - pubs.aip.org
InP-based compounds, such as InGaAsP, are key materials for high-performance photonic
and electronic devices. The important feature of the InGaAsP alloy is that the change of its
alloy composition while maintaining lattice matching with InP can variate its band gap
between 0.72 and 1.35 eV. This offers flexibility in designing various devices for
communication applications. InP itself has higher saturation drift velocity than GaAs, and it
can be used for the fabrication of high speed field effect transistors. An In0. 52Al0. 48As/In0 …
and electronic devices. The important feature of the InGaAsP alloy is that the change of its
alloy composition while maintaining lattice matching with InP can variate its band gap
between 0.72 and 1.35 eV. This offers flexibility in designing various devices for
communication applications. InP itself has higher saturation drift velocity than GaAs, and it
can be used for the fabrication of high speed field effect transistors. An In0. 52Al0. 48As/In0 …
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