… layer used as the etching mask. To increase the diameter of the pores in GaAs chemically,
anodically etched GaAs … peroxide used for pre-etching at 20 C (Fig. 1f and g). Alternatively, …

… etching was demonstrated by forming passive optical waveguides in GaA1As-GaAs-GaA1As
epitaxial layers… in GaAIAs-GaAs-GaAIAs epitaxial layers grown on a GaAs substrate using …

… crystallites “put in” the matrix of anodic oxides. In our opinion, such a porous GaAs layer is
formed at the electrochemical etching of crystalline GaAs substrate. A comparison of the PL …

… In order to explain the behavior of GaAs transformation to porous arsenic oxide under
anodic bias, we propose a qualitative model based on the decomposition of compound …

… GaAs suggests that the depletion layers may be overcome also in other materials. Our
experiments were carried out under conditions of strongly anisotropic etching … , anodic etching of n-…

… Porous GaAs layers have been formed by anodic etching of n + -type GaAs (10.0) substrates
… properties of porous GaAs layers formed by electrochemical anodic etching of n + Si-doped …

… Working, for example, with the epitaxial structure of most interest at this time [the five-layer
GaAs/ … We have carried out anodic etching experiments on n+-GaAs exactly as described by …

… layers obtained by the local anodic oxidation method on the anisotropy of the plasma chemical
etching … , after removal of the oxide layer and plasma chemical etching, has a roughness …

… results of growing anodic oxides on GaAs and GaP using … minimal oxide etching to total
anodic etching with minimal re… of a thinning of the oxide layer by dissolution, until the very thin…

… Oxide layers on GaAs show no change in thickness after oxide growth and after bake cycles
up … The anodic oxide on GaAs is readily etched in HC1 solutions; the oxide etch rate vs. HC1 …