Porous GaAs formed by a two-step anodization process

M Hao, H Uchida, C Shao, T Soga, T Jimbo… - Journal of crystal …, 1997 - Elsevier
… In this letter, we proposed a method in which a n-type GaAs wafer was first anodized in HF
for a … , porous GaAs has been formed by a two-step electrochemical anodization process. The …

Effect of porous GaAs layer morphology on Pd/porous GaAs Schottky contact

AP Oksanich, SE Pritchin, MG Kogdas, AG Kholod… - 2019 - essuir.sumdu.edu.ua
Gallium arsenide coated with a porous layer (porous GaAs) … Among other applications of
porous GaAs are humidity and gas (eg … anodized at 80 mA/cm2 current density, porous GaAs

Evolution of pore growth in GaAs in transitory anodization regime from one applied voltage to another

EI Monaico, EV Monaico, VV Ursaki… - Surface Engineering and …, 2021 - Springer
… of the pore growth in GaAs in a dynamic regime of anodization occurring at … pore growth is
also possible or only crysto pores are formed, similarly to the regime of stationary anodization. …

Pd/Porous GaAs in the manufacture of Schottky diodes

AP Oksanich, SE Pritchin, MG Kogdas… - … on Modern Electrical …, 2019 - ieeexplore.ieee.org
… layer porosity increasing, the difference in characteristics between the structure without
porous GaAs and structures with porous GaAs … and depends on the anodizing mode, which is …

Formation of porous GaAs by pulsed current electrochemical anodization: SEM, XRD, Raman, and photoluminescence studies

NK Ali, MR Hashim, AA Aziz… - … and Solid-State …, 2009 - iopscience.iop.org
… to fabricate porous GaAs , including electrochemical anodization, spark processed porous,
and … showed that the porous layers formed in GaAs(100) samples were uniform both laterally …

The Anodization of GaAs and GaP in Aqueous Solutions

B Schwartz, F Ermanis, MH Brastad - Journal of The …, 1976 - iopscience.iop.org
… made during the anodization of GaAs and GaP have been described. In this section an
attempt is made to obtain better understanding of the anodization processes by developing a set …

Investigation of porous GaAs layers formed on n+‐type GaAs by electrochemical anodization in HF solution

L Beji, L Sfaxi, H Benouada, H Maaref - physica status solidi (a), 2005 - Wiley Online Library
… and there are few reports concerning porous GaAs. Though the formation mechanism is
different, porous GaAs was made by the method analogous to that for porous silicon. It is there…

Observation of crossing pores in anodically etched n-GaAs

S Langa, J Carstensen, M Christophersen… - Applied Physics …, 2001 - pubs.aip.org
Pores in GaAs in the micrometer range and oriented in 111 directions have been observed
during the anodization of GaAs in aqueous HCl electrolytes. A direct evidence of pores

[PDF][PDF] Effects of growth conditions on structural and optical properties of porous GaAs layers

Z Harrabi, L Beji, N Chehata, A Ltaief, H Mejri… - J. Nano. Adv …, 2014 - researchgate.net
… is considered of large interest because the elaborated porous GaAs layers using anodization
technique present a luminescence behavior in the visible region and at higher energies …

Fabrication and structure modulation of high-aspect-ratio porous GaAs through anisotropic chemical etching, anodic etching, and anodic oxidation

S Ono, S Kotaka, H Asoh - Electrochimica Acta, 2013 - Elsevier
… morphological modification of porous GaAs using chemical and … formation of GaAs substrates
could be controlled. Because … or re-anodization in citric acid of anodized porous GaAs. Top …