Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy

L Wang, JM Chauveau, R Brenier, V Sallet… - Applied Physics …, 2016 - pubs.aip.org
… their residual carrier concentration. For this purpose, an SSRM calibration profile has been
… -adapted technique for two dimensional dopant/carrier profiling on ZnO at nanoscale. Finally…

Limitations of the calibration curve method for determining dopant profiles from scanning capacitance microscope measurements

JF Marchiando, JJ Kopanski, J Albers - Journal of Vacuum Science & …, 2000 - pubs.aip.org
… dopant concentration along the surface of a processed semiconductor wafer, is scanning
Since the SCM provides a measure of the majority carrier concentration, extracting a dopant …

Calibrated scanning spreading resistance microscopy profiling of carriers in III–V structures

RP Lu, KL Kavanagh, SJ Dixon-Warren… - Journal of Vacuum …, 2001 - pubs.aip.org
… pμp), where μ is the carrier mobility and n and p are the carrier concentrations for holes and
electrons, respectively. Conventional, point-contact profiling techniques, such as dual probe …

Quantitative scanning microwave microscopy: A calibration flow

T Schweinböck, S Hommel - Microelectronics Reliability, 2014 - Elsevier
… with the corresponding calibration curve determines the carrier concentration. For a non-monotonous
behaviour two intersection points and hence two carrier concentration values are …

Two-dimensional profiling of carriers in a buried heterostructure multi-quantum-well laser: Calibrated scanning spreading resistance microscopy and scanning …

D Ban, EH Sargent, SJ Dixon-Warren… - Journal of Vacuum …, 2002 - pubs.aip.org
… the product of the local free-carrier concentration (n) and the carrier mobility (μ) near the
point contact. However, variations in the tip–surface contact resistance must also be considered.…

Quantifying charge carrier concentration in ZnO thin films by Scanning Kelvin Probe Microscopy

C Maragliano, S Lilliu, MS Dahlem, M Chiesa… - Scientific reports, 2014 - nature.com
concentration has always been challenging. Here we show how to probe the charge carrier
density of zinc oxide thin films by Scanning … By doing so, we are able to calibrate each tip. …

Calibrated nanoscale dopant profiling using a scanning microwave microscope

HP Huber, I Humer, M Hochleitner, M Fenner… - Journal of Applied …, 2012 - pubs.aip.org
… The scanning microwave microscope is used for calibrated capacitance spectroscopy and
… On silicon semiconductor calibration samples with doping concentrations ranging from 10 …

Scanning spreading resistance microscopy and spectroscopy for routine and quantitative two-dimensional carrier profiling

P Eyben, M Xu, N Duhayon, T Clarysse… - Journal of Vacuum …, 2002 - pubs.aip.org
calibration curves and the fast quantification of one-dimensional and two-dimensional
resistivity (and carrier… to the concentration range of interest) and have been calibrated with the …

Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy

P De Wolf, R Stephenson, T Trenkler… - Journal of Vacuum …, 2000 - pubs.aip.org
… The second calibration method includes direct measurement of the etching rate as a function
of carrier concentration using homogeneously doped bulk or epitaxially grown Si samples. …

Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopy

L Wang, J Laurent, JM Chauveau, V Sallet… - Applied Physics …, 2015 - pubs.aip.org
… of carrier profiling is that the capacitance variation in response to Vac reflects the corresponding
carrier concentration… structures with varying Ga dopant concentrations. Besides, residual …