… Much of Volume 2 also focused on the growth of a sophisticated GaInAsP quaternary … (OEIC)
devices. Naturally, a key element of this work is the application of GaAs and its related …

… GaInAsP/GaAs system has also been investigated as an alternative to the widely used
AIGaAs/GaAs systemfor device applications … in service of several devices based on these material …

… This paper describes the vapor-phase epitaxial (VPE) growth and characterization of GaAs
… the growth of GaAs and (n -type) GaxInl__,As P1_ alloys for microwave device applications. …

… applications are presented: InNAsP/InP, GaInNAs/GaAs, Ga(… InNAsP/GaInAsP quantum
wells grown on InP are superior … ), as compared to GaInAs/GaInAsP quantum wells, because of …

… by stoplayers of monocrystalline GaInAs and GaInAsP corn- … subsequent layer, or by
opto-electronic device applications. … GaAs and InP grown at low pressure, the growth rate The …

… This study suggests that GSMBE is suitable for the growth of GaInAsP lattice matched to
GaAs, and the GaInAsP is a promising candidate for optoelectronic device applications. …

… other applications. The GalnAsP/InP system appears to be ideally suited to the fabrication of
such devices, … age generated by AlxGal_~s-GaAs pn heterojunctions have been reported by …

… Solar cell structures for the InP-based and GaAs-based tandem devices were grown … best
wafer bonded GaInP/GaAs//GaInAsP/GaInAs four-junction solar cell device. The current under …

… lattice-matched to a GaAs substrate and thus have potential applications in several electronic
devices such as HEMT, … Growth conditions were adjusted to grow GaAsP—GaInAsP with a …

… lower than the values that have been reported for GaAs. These results suggest that the
insulator for MIS devices using GaInAsP (and InP) should not be produced by anodic oxidation. …