… GaAs was sealed in an evacuated 6-in. quartz tube and inserted into a tube furnace at 500
C in such a way that the GaAs … of (EG - w) for GaInAsP and GaAs. The data points at 4 X 10 4 …

… of device applications. Variable gap AlxGal_xAs superlatticesl-4 and ordered (AlAs, GaAs)
alloys5.6 have recently attracted considerable attention in view of their interesting device …

… (OEIC) devices. Naturally, a key element of this work is the application of GaAs and its related
… growth of GaAs and related alloys for photonic and electronic devices will be described. …

… This is why a 1.14 eV device will out perform GaAs which has a band gap of 1.43 eV. … of
a 1.14 eV device has attained the same level of performance as GaAs, and has exceeded the …

… of the grown films for practical applications. We expect that the … surface can be used in devices
based on the surface plasmon … GaInAsP films to be used in many optoelectronic devices. …

… of the general device structure used for GaInAsP solar cells … advantage for GaInAsP cells
stacked under GaAs-based top … confinement for the active GaInAsP layers. Entech covers are …

… applications … /GaAs top tandem solar cell structure bonded to a GaInAsP/GaInAs bottom
tandem cell. This combination realizes the ideal bandgap combination for a four junction device …

… We begin by comparing devices with either three unstrained GaAs-Alo,25Gao.75As QW’s or
… in the active region of the devices containing four strained Ino,35Gao,65As-GaAs QW’s [Fig. …

… ,um, which is important for fiber optic applications. However, … growth of GaInAsP by OMVPE
lattice matched to GaAs using … ns in material grown in our equipment. It is important to note …

… and emitting at 980 nm wavelength are of interest for the application of pumping Er-… or
device improvement. Below we present the results for devices from structures with the thin GaAs …