… GaInAsP-InP, GaInAsP-GaAs, and related material for electronic and photonic device applications… the electronic, optoelectronic, and quantum devices that have revolutionized …
AG Foyt - Journal of Crystal Growth, 1981 - Elsevier
… In the first part of the applications of InP and GaInAsP stems from … GaInAsP/InP optoelectronic devices is the dramatic … is tics for the GaInAsP/InP avalanche photodiode shown in the …
T Baba - IEEE journal of selected topics in quantum electronics, 1997 - ieeexplore.ieee.org
… A GaInAsP–InP 2-D photonic crystal constructed by submicron columns was fabricated … is minimally required for deviceapplications. In contrast to this, a GaInAsP–InP microdisk cavity of …
JP Duchemin, JP Hirtz, M Razeghi, M Bonnet… - Journal of Crystal …, 1981 - Elsevier
… GaInAsP/InP DH lasers exhibited high thresholds due to a poor interface between the p-InP … LP-MOCVD technique either by stoplayers of monocrystalline GaInAs and GaInAsP corn- …
F Capasso, HM Cox, AL Hutchinson, NA Olsson… - Applied physics …, 1984 - pubs.aip.org
… of the InP and Gllo.47 InO.53 As layers between 5 and 55 A. … effect of holes in a "high-low" InP /Gllo.47 InO.53 As avalanche … _ x Inx ASI _ y Py alloys in a variety of deviceapplications. …
GK Periyanayagam, T Nishiyama… - … status solidi (a), 2018 - Wiley Online Library
… of the optical devices.1 High performance and reliable semiconductor laser diodes (LDs) are pivotal for digital processing systems, especially for applications in optical communications …
… grown material for deviceapplications is also demonstrated … GaInAsP and related materials were performed on (100) InP … The oxide film was deposited on InP substrates by plasma-…
M Erdtmann, J Jiang, AW Matlis… - … and Devices V, 2000 - spiedigitallibrary.org
… The energies ofthe first and second allowed states for these GaInAsP/InP samples can be calculated … This value for the GaInAsP/lnP conduction band offset is smaller than the previously …