GaInAsP/InP avalanche photodiodes

CE Hurwitz, JJ Hsieh - Applied Physics Letters, 1978 - pubs.aip.org
… optical fiber transmission systems as well as other applications. The GalnAsP/InP system
appears to be ideally suited to the fabrication of such devices, since the band gap of the …

III-NV low-bandgap nitrides and their device applications

CW Tu - Journal of Physics: Condensed Matter, 2001 - iopscience.iop.org
applications are presented: InNAsP/InP, GaInNAs/GaAs, Ga(In)NP/GaP and GaInNP/GaAs.
InNAsP/GaInAsP quantum wells grown on InP … compared to GaInAs/GaInAsP quantum wells, …

[图书][B] The MOCVD Challenge: A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications

M Razeghi - 2010 - taylorfrancis.com
GaInAsP-InP, GaInAsP-GaAs, and related material for electronic and photonic device
applications… the electronic, optoelectronic, and quantum devices that have revolutionized …

The electro-optic applications of InP

AG Foyt - Journal of Crystal Growth, 1981 - Elsevier
… In the first part of the applications of InP and GaInAsP stems from … GaInAsP/InP optoelectronic
devices is the dramatic … is tics for the GaInAsP/InP avalanche photodiode shown in the …

Photonic crystals and microdisk cavities based on GaInAsP-InP system

T Baba - IEEE journal of selected topics in quantum electronics, 1997 - ieeexplore.ieee.org
… A GaInAsPInP 2-D photonic crystal constructed by submicron columns was fabricated … is
minimally required for device applications. In contrast to this, a GaInAsPInP microdisk cavity of …

GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications

JP Duchemin, JP Hirtz, M Razeghi, M Bonnet… - Journal of Crystal …, 1981 - Elsevier
GaInAsP/InP DH lasers exhibited high thresholds due to a poor interface between the p-InP
LP-MOCVD technique either by stoplayers of monocrystalline GaInAs and GaInAsP corn- …

Pseudo‐quaternary GaInAsP semiconductors: A new Ga0.47In0.53As/InP graded gap superlattice and its applications to avalanche photodiodes

F Capasso, HM Cox, AL Hutchinson, NA Olsson… - Applied physics …, 1984 - pubs.aip.org
… of the InP and Gllo.47 InO.53 As layers between 5 and 55 A. … effect of holes in a "high-low"
InP /Gllo.47 InO.53 As avalanche … _ x Inx ASI _ y Py alloys in a variety of device applications. …

Lasing characteristics of 1.2 µm GaInAsP LD on InP/Si substrate

GK Periyanayagam, T Nishiyama… - … status solidi (a), 2018 - Wiley Online Library
… of the optical devices.1 High performance and reliable semiconductor laser diodes (LDs)
are pivotal for digital processing systems, especially for applications in optical communications …

Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates

M Gibbon, JP Stagg, CG Cureton… - Semiconductor …, 1993 - iopscience.iop.org
… grown material for device applications is also demonstrated … GaInAsP and related materials
were performed on (100) InP … The oxide film was deposited on InP substrates by plasma-…

Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications

M Erdtmann, J Jiang, AW Matlis… - … and Devices V, 2000 - spiedigitallibrary.org
… The energies ofthe first and second allowed states for these GaInAsP/InP samples can be
calculated … This value for the GaInAsP/lnP conduction band offset is smaller than the previously …