This paper reports on 1.3 /spl mu/m complex coupled DFB lasers, 1.55 /spl mu/m (wavelength
selective) photodiodes and passive spot size converters integrated with Y-shaped …

… solve this problem because n-type InP has much less resistivity and exhibits lower absorption
loss than p-type InP. Some applications of tunnel junctions in semiconductor lasers have …

… These data suggest potential application of these oxide films in SiC MOS devices. … In
summary, we have designed and fabricated a new planar InP IGaInAsP IGaInAs BS APD which is …

… InP substrates using a vertical LPE furnace. A new chemical etchant, named KKI-121, was
developed to etch InP and GaInAsP … The transparency of the InP substrate allows it to be used …

… We report on the enhanced electro-optic coefficient of GaInAsP three-step quantum wells
3SQW for high power electrorefraction modulator applications. Measured electro-optic …

… on the QDs grown on the InP buffer than on those grown on the GaInAsP buffer. A very thin
(… (QDs) on InP are very promising for long wavelength optoelectronic device applications (1.3–…

High‐performance avalanche photodiodes responding out to 1.25 μm have been fabricated
in inverted‐mesa n + ‐InP/n‐GaInAsP/n‐InP/p + ‐InP structures. Uniform avalanche gains of …

… GaInAsP–InP device has been reduced to 1.6 m and the … discuss actual applications of
photo-pumped devices at this … injection devices has been demonstrated only for GaInAsP–InP [11…

… Several hundred n- GaInAs /InP layers have been grown for material and device studies.
Fig. 9 shows the room temperature electron mobility, 11(300), of a number of samples plotted …

… , high device yield and smooth far-field patterns have been obtained for mass-transported
GaInAsP/InP … of 1.3 pm GaInAsP/InP lasers by liquidphase epitaxy,” Electron. Lett., vol. 16, pp. …