… attractive for many applications including photonic … GaInAsP∕InP quantum wells. Measured
modulator linearity is more than one order of magnitude higher than bulk GaAs and GaInAsP…

… O1.6 p spectral -region of interest for fiber optics applications. Typically, these devices, …
Incident light is absorbed in the GaInAsP, generating holes which are swept into the InP where …

… for many optoelectronic applications, and in particular in … /InP mUltiple quantum wells, again
for laser applications, has … having both GaInAs or GaInAsP wells and InP barriers. These …

… suitable for applications in optoelectronic and optical devices … wavelength range whilst
retaining lattice matching to InP [4,6]. … have important applications in optoelectronic devices such …

… GaInAs(P) heterostructures for 1.55 jim lasers were grown by chemical beam epitaxyon InP
… temperature PL spectra of an InGaAs/GaInAsP MQW structure (full lines) and a GaInAsP …

… InP layer; p-type InP and GaInAsP (200 and 300 nm thick, respectively) top layers. The 1.3
mm thick undoped InP … losses in the active region of the device. The optical waveguide is 4 …

… of fundamental concepts to the industry for development and technological applications. …
In conclusion, a GaInAsP/InP membrane structure was bonded on a Si substrate via a-Si …

… behaviour that make them suitable for telecommunications applications. InGaAsP/InP is
one material system that has been used to manufacture devices that operate in the 1.55 μm …

… , it is GaInAsP solid solutions lattice-matched to InP that … use of a system of GaInAsP solid
solutions obtained on an InP … The GaInAsP and InP materials investigated in this study have …

… applications in long wavelength MQW lasers, GaInAsP/InP … structures with continuously
graded GaInAsP confinement layers (… quality of MOMBE grown InP-based GRINSCH structures. …