… This paper reports on two studies of vapor-phase epitaxy on InP … three compounds that
are deposited on thesubstrate, uses PH3 … WE growth of GaInAsP alloys on InP substrates is …

50 layers of GaInAsP/InP heteromultistructure with one quarter-wavelength … application of
the multilayer as a reflector to a surface-emitting laser is demonstrated and a first GaInAsP/InP …

… We have fabricated the InP/Si substrate using a direct … deposited GaInAsP/InP double
heterostructure layers on this InP/Si … -temperature lasing of the GaInAsP LD on the InP/Si substrate …

… fiber optics applications. Typically, these devices, which have had the p -n junction located in
the … Incident light is absorbed in the GaInAsP, generating holes which are swept into the InP …

… , and the device acts as an XOR optical logic gate. One potential application for this device is
… We also studied the emission wavelength as a function of position of the GaInAsP quantum …

… of fundamental concepts to the industry for development and technological applications. …
The high-external differential quantum efficiency operation of a GaInAsP/InP membrane …

… For some applications, especially for tunneling devices, In 0.53 Ga 0.47 As… GaInAsP quantum
wells and InP barriers grown by MOCVD. Three QWIP devices were studied and the device …

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… Application of VPE to the growth process has been shown to be very attractive in mass
production of sophisticated devices … When InGaAs is technique is promising for GaInAsP/InP long …

… structures for high contrast ratio, low voltage optiInP based optical modulators are promising
… Both GaInAsP/InP and GaAlIncomponents for applications in optical intercon- As/InP …