… Single and double GaInAsP/InP microring resonators with a free spectral range of 50 GHz
and 100 GHz were fabricated and characterized. The single ring resonator with integrated …

… applications and screening of devices for reliability assurance can be a significant part of the
total device … on prolonged aging for individual device lifetime assessment would prove to be …

… tor lasers have mass applications in local fiber networks, … However conventional 1.3 µm
GaInAsP/InP lasers with low threshold … Typical T0 values for GaInAsP based ridge lasers are 50–…

… for use in infra-red devices. They can be grown lattice matched on InP over a wide range
of … method for dealing with singlemode fibres and their design for engineering applications. …

… closely with increasing thickness of InP clad of the external … for DBR-ITG and DFB
GalnAsP/InP lasers.The typical value of … In conclusion, a novel 1-5-1-6 ^m GalnAsP/InP BJB-DBR …

… The GaInAs/InP and GaInAsP/InP double hetero- and quantum well structures demonstrated
in this paper were grown by low-pressure MOVPE at a total pressure of 20 hPa. At a …

… device applications. In work on GalnAsP grown by LPE on InP substrates, it is desirable to
selectively remove the InP … etchant in the GaInAsP/InP system for removing the InP substrate. …

… with FIB attached, resulting in cleaner wafers and more reliable devices. Also, due to their
… devices as on-chip or off-chip couplers. FIB gratings represent an effective application of the …

… InP and direct band gap energies between 0.75 and 1.35 eV. This material system has been
studied extensively for its applications … high quality GaInAsP based laser diodes on InP. …

… GaInAsP/InP DH grown by LPMOCVD, for laser applications, in a bromine solution. It is not
possible to reveal the interfaces between the InP n-type confinement layerand the substrate. …