… Gaxlnj_xAsyP1_y quaternary alloys on InP are very important for optoelectronic device
applications, and have been investigated by molecular beam epitaxy (MBE) techniques, …

… p-InP without using an additional GaInAsP or GaInAs contact layer. This simplifies the device
… Group on GaInAsP diode lasers and applications of diode lasers to optical interconnects. …

… InP buffer layers were formed before GaInAsP layers deposition, the molar flows of the
precursors during InP … and electronic device applications (2ed. Taylor and Francis/CRC Press) p …

… Here, we used five GaInAsP quantum wells in combination with AlGaInAsP instead of just …
this AlGaInAsPSb-based device are promising for applications in local area fiber networks. …

… /AlxIn1 -,As on InP HEMTs for microwave power applications. … layer doped 2 x 10l8 cmP3,
followed by a 50 a undoped InP … The preliminary results indicate that GaInAsP/InP composite …

… and device reliability. For long emission wavelength applications (1.3, 1.55 μm) the InP-based
GaInAsP … We recently reported first device results from 1.3 μm BH GaInAsP/InP lasers …

… zero-dimensional structures for optoelectronic device applications.InAs/… / InP(100) QDs
embedded in lattice matched GaInAsP which is the waveguide core material in InP-based devices…

… While other crystal surfaces are also encountered in regrowth, application of the procedures
… quality epitaxial layers of InP on ! 111) In planes. Application of these cleaning procedures …

… to InP are suitable for device applications. Among these, the most sought after quaternary
lattice matched to InP … , but it seems that such devices based on InP/GaInAsP will most likely be …

… Suematsu, “A GaInAsP/InP tapered-waveguide semiconductor laser amplifier integrated with
a … Tajima, “GaInAsP/InP tapered amplifier for high power applications,” master thesis, Tokyo …