… porous GaAs (100) using three different acids, H 2 SO 4 , HF, and HCl, diluted in DMF based
solutions… do not show promising results compared to H 2 SO 4 : DMF of the porous GaAs …

… layer on the porous GaAs/GaAs substrate etched by 75% DMF … all, the porous GaAs/GaAs
substrate, etched by 75% DMF … optical characteristics of the layer due to its better porosity. …

… In comparison to other acids, the mixture of H 2 SO 4 and DMF demonstrated the best porous
structures. The best porous GaAs had clearly defined, highly homogeneous circular pores […

… porosity increasing, the difference in characteristics between the structure without porous
GaAs and structures with porous GaAs … by the decrease in the GaAs porous layer, and, as a …

… The microstructure of a por-GaAs layer correlates with the magnitude of formation current, …
of gallium arsenide with a layer of porous GaAs on the surface. The thickness of the por-GaAs …

… and dimethylformamide nickel dissolved with an oxidation number less than two. In … porous
ingots containing cracks. In addition, the water vapor caused several grams of the GaAs ingot …

… -porous and porous GaAs structures using SILVACO TCAD tools. The porous GaAs with
different pore … of pore depth on the optical and electrical properties of GaAs semiconductor. The …

… In this paper we report on the first inclusion of GaAs in the pores of MCM-41 and focus on
the optical characterization of, this time, a direct-gap semiconductor heterostructure. Close to …

… DMF shows the best porous structures in comparison to other acids. … porous GaAs layers
formed at the same etching conditions by electrochemical etching of Zn-doped p + -type GaAs (…

… successively in boiling dimethylformamide, acetone, etched in … of n-GaAs:Te and nGaAs:Cr
were etched in solutions of (1:1) … possible to form porous structures on high-resistivity n-GaAs. …