Inverted Si: PbS colloidal quantum dot heterojunction-based infrared photodetector

K Xu, X Xiao, W Zhou, X Jiang, Q Wei… - … applied materials & …, 2020 - ACS Publications
… The inverted Si:PbS CQDs heterojunction in this work provides a new strategy to produce
low cost and high detectivity infrared photodetector based on the integration of PbS CQDs …

High quality silicon: colloidal quantum dot heterojunction based infrared photodetector

X Xiao, K Xu, M Yin, Y Qiu, W Zhou, L Zheng… - Applied Physics …, 2020 - pubs.aip.org
heterojunction device to a short wavelength infraredheterojunction on the Si surface and
sheds some light on the construction of high performance Si based infrared photodetectors

Self-driven visible-near infrared photodetector with vertical CsPbBr3/PbS quantum dots heterojunction structure

H Zhao, Y Zhang, T Li, Q Li, Y Yu, Z Chen, Y Li… - …, 2019 - iopscience.iop.org
photodetectors are widely used in communication and imaging. As a newly developed
semiconductor material, perovskite quantum dots (… -driven photodetector based on heterojunction

High-sensitivity silicon: PbS quantum dot heterojunction near-infrared photodetector

J Wang, J Chen - Surfaces and Interfaces, 2022 - Elsevier
dots (CQDs) to form stable and high-quality junctions still has problems. In this work, Si: PbS
CQD heterojunction near-infrared photodetector … substrate to the near-infrared. What's more, …

High-performance Ge quantum dot decorated graphene/zinc-oxide heterostructure infrared photodetector

X Liu, X Ji, M Liu, N Liu, Z Tao, Q Dai… - … applied materials & …, 2015 - ACS Publications
dot (Ge QD) is synthesized and decorated onto reduced graphene oxide (RGO) fragments to
overcome the low infrared (IR… RGO/ZnO heterostructure infrared photodetector is reported in …

Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature

P Bhattacharya, XH Su, S Chakrabarti… - Applied Physics …, 2005 - pubs.aip.org
… As double barrier heterostructure. The tunnel … dot heterostructure design or the growth
parameters. By simply adjusting the separation of the Al 0.1 Ga 0.9 As barrier from the quantum dot

High-performance mid-infrared quantum dot infrared photodetectors

S Chakrabarti, AD Stiff-Roberts, XH Su… - Journal of Physics D …, 2005 - iopscience.iop.org
… We have grown a 70 layer QDIP heterostructure on a semi-insulating (100) GaAs substrate,
schematically shown in figure 1(a). The conduction band profile under bias is also shown in …

Quantum dot infrared photodetectors

HC Liu, M Gao, J McCaffrey, ZR Wasilewski… - Applied Physics …, 2001 - pubs.aip.org
… by n doping the heterostructure, and transitions from the occupied quantum dot states to the
wetting layer or to the continuum states resulted in infrared photodetection. We demonstrate …

Quantum-dot infrared photodetectors: a review

AD Stiff-Roberts - Journal of Nanophotonics, 2009 - spiedigitallibrary.org
… Through lithographical, epitaxial, or chemical techniques, active region heterostructures
), important advantages of quantum dots for IR photodetection include inherent sensitivity to …

Silicon surface passivation for silicon-colloidal quantum dot heterojunction photodetectors

Q Xu, IT Cheong, L Meng, JGC Veinot, X Wang - ACS nano, 2021 - ACS Publications
… the infrared-light sensitivity of a Si-based photodetector. … -efficiency photodetector based
upon a Si:CQD heterojunction. … -performance Si:CQD heterojunction photodetector. We have …