… separate InAs/InGaAs one-DWELL (1-DWELL) lasers. A schematic diagram of the electron
energy levels in the laser active gain region material design is shown in Fig. 1. An InAs/In …

… 10 cm , dot base length 7 nm) and the QD exciton volume … [22] the confinement factor for a
single layer dot laser structure is … for InAs–GaAs QD’s and demonstrated a three-layer InAs–…

… We found that the reduction of the total amount of InAs (… lasers in this work, the QDs emitting
at 1.28 μm were directly formed on the GaAs matrix at 485C by deposition of 2.5 ML of InAs …

… broad-area (100 m wide) laser diodes from three epitaxial wafers that feature a layer of InAs
QDs grown within an InGaAs QW. Two of the laser wafers have a single layer of QDs, while …

… High-performance quantum dot QD lasers near 1.3 m were fabricated using four stacks of
InAs QDs embedded within strained InGaAs quantum wells as an active region and a reactive-…

… 3) we first investigated MOCVD grown InAs QDs in a GaAs matrix emitting at a wavelength
of around 1.1 µm at room temperature. These samples were grown at the TU Berlin [14, 15, 48…

… InAs/InGaAs QDs on GaAs substrate one can realise 1.5 μm range broad area lasers, which
… Experiment: Laser structures were grown at 500 C using elementalsource molecular beam …

… The presented improved InAs ∕ InP QD laser performances are very promising for the
realization of high-frequency modulated laser and optical amplifier working at the 1.55 μ m optical …

… tensor meaning a stretch in GaAs and squeeze in InGaAs lattice constant. Along z-direction, …
To explain, we notice that lattice constant of GaAs and InAs is 0.565325nm and 0.60577nm …

… characteristics of InAs–InGaAs quantum-dot (QD) lasers operating at 1.3 m. … lasers. We
therefore introduce an improved model that allows for both free carriers and excitons in the dots. …