… This method uses a double layer of mesoporous Si formed by electrochemical etching: A …
on porous germanium (PGe) were published. Flamand et al. studied porous Ge formation in HF-…

… of several aspects of the formation mechanisms of mesoporous Germanium based on the …
In this work formation of thick mesoporous Ge layers by bipolar electrochemical etching is …

… Besides, near-infrared emission from MP-Ge formed by electrochemical etching is evidence
that luminescence originates from quantum confinement effect [13]. Moreover, germanium …

… thus the formation of porous double layers with different porosities. We investigate the
porosity of mesoporous single layers formed by means of electrochemical etching in highly …

… , a simple electrochemical etching procedure … formation of nanowires, electrochemical
etching is easy and cheap. Under special etching conditions, similar nanowires have been etched …

… From a basic research point of view, Ge has some special properties that are of interest
in the context of investigating electrochemical pore formation in semiconductors: …

… Semiconductors such as Ge or Si are chemically etched in aqueous solutions … forming
water-soluble complexes with the semiconductor. The etching process is actually electrochemical …

… Electrochemical techniques have been successful for the … The electrochemical etching of
germanium (Ge) has also … electrolyte/germanium interface, and especially surface formation of …

… germanium layers by means of electrochemical etching. … electrochemistry of semiconductors
necessary for understanding this work. Chapter 3 explains the electrochemical formation of …

… by electrolytic etching in HCl-H2O in which the anodic oxide dissolves as rapidly as it is
being formed. … of 10-20 mA/cm2 at 2-3 V for controlled electrolytic etching of n-GaAs or nGaP.'85 …