… Much of Volume 2 also focused on the growth of a sophisticated GaInAsP quaternary … (OEIC) devices. Naturally, a key element of this work is the application of GaAs and its related …
ST Jolly, SY Narayan, JP Paczkowski… - Semiconductor …, 1982 - spiedigitallibrary.org
… GaAs and the growth of GaxIni_xASyP]_ and n-Gap^-ylnp^As lattice matched to semi-insulating Fe-doped InP substrates for microwave field-effect transistor (FET) applications. … GaAs [1] …
M Razeghi, YH Choi, X He, CJ Sun - Materials science and …, 1995 - Taylor & Francis
… GaInAsP/GaAs system has also been investigated as an alternative to the widely used AIGaAs/GaAs systemfor deviceapplications … in service of several devices based on these material …
CW Tu - Journal of Physics: Condensed Matter, 2001 - iopscience.iop.org
… applications are presented: InNAsP/InP, GaInNAs/GaAs, Ga(… InNAsP/GaInAsP quantum wells grown on InP are superior … ), as compared to GaInAs/GaInAsP quantum wells, because of …
G Zhang, A Ovtchinnikov, J Näppi, T Hakkarainen… - Journal of crystal …, 1993 - Elsevier
… This study suggests that GSMBE is suitable for the growth of GaInAsP lattice matched to GaAs, and the GaInAsP is a promising candidate for optoelectronic deviceapplications. …
… other applications. The GalnAsP/InP system appears to be ideally suited to the fabrication of such devices, … age generated by AlxGal_~s-GaAs pn heterojunctions have been reported by …
F Dimroth, M Grave, P Beutel, U Fiedeler… - … and Applications, 2014 - Wiley Online Library
… the GaInP/GaAs//GaInAsP/GaInAs structure (left). The bond location, indicated by a double slash //, is formed between the GaAs and GaInAsP subcells. The GaAs and InP substrates …
SM Bedair, T Katsuyama, PK Chiang… - Journal of Crystal …, 1984 - Elsevier
… to a GaAs substrate and thus have potential applications in … Growth conditions were adjusted to grow GaAsP—GaInAsP … lattice parameter that is matched to the GaAs substrate, and …
G Zhang, A Ovtchinnikov - Applied physics letters, 1993 - pubs.aip.org
… GaAs. Thus strain-compensated InGaAs/GaAsP MQW structures are desirable for device applications … a series of InGaAs/GaAs quantum well lasers with GaAs barriers which comprised …