GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications

JP Duchemin, JP Hirtz, M Razeghi, M Bonnet… - Journal of Crystal …, 1981 - Elsevier
… Our early MOCVD grown GaInAsP/InP DH lasers exhibited high … by stoplayers of
monocrystalline GaInAs and GaInAsP corn- … GaAs and InP grown at low pressure, the growth rate …

[图书][B] The MOCVD Challenge: A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications

M Razeghi - 2010 - taylorfrancis.com
… Much of Volume 2 also focused on the growth of a sophisticated GaInAsP quaternary … (OEIC)
devices. Naturally, a key element of this work is the application of GaAs and its related …

Growth And Characterization Of GaAs, GaInAs, and GaInAsP for microwave applications

ST Jolly, SY Narayan, JP Paczkowski… - Semiconductor …, 1982 - spiedigitallibrary.org
GaAs and the growth of GaxIni_xASyP]_ and n-Gap^-ylnp^As lattice matched to semi-insulating
Fe-doped InP substrates for microwave field-effect transistor (FET) applications. … GaAs [1] …

Exploration of entire range of III–V semiconductors and their device applications

M Razeghi, YH Choi, X He, CJ Sun - Materials science and …, 1995 - Taylor & Francis
GaInAsP/GaAs system has also been investigated as an alternative to the widely used
AIGaAs/GaAs systemfor device applications … in service of several devices based on these material …

III-NV low-bandgap nitrides and their device applications

CW Tu - Journal of Physics: Condensed Matter, 2001 - iopscience.iop.org
applications are presented: InNAsP/InP, GaInNAs/GaAs, Ga(… InNAsP/GaInAsP quantum
wells grown on InP are superior … ), as compared to GaInAs/GaInAsP quantum wells, because of …

GSMBE growth of GaInAsP on GaAs substrates and its application to 0.98 μm lasers

G Zhang, A Ovtchinnikov, J Näppi, T Hakkarainen… - Journal of crystal …, 1993 - Elsevier
… This study suggests that GSMBE is suitable for the growth of GaInAsP lattice matched to
GaAs, and the GaInAsP is a promising candidate for optoelectronic device applications. …

GaInAsP/InP avalanche photodiodes

CE Hurwitz, JJ Hsieh - Applied Physics Letters, 1978 - pubs.aip.org
… other applications. The GalnAsP/InP system appears to be ideally suited to the fabrication of
such devices, … age generated by AlxGal_~s-GaAs pn heterojunctions have been reported by …

Wafer bonded four‐junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency

F Dimroth, M Grave, P Beutel, U Fiedeler… - … and Applications, 2014 - Wiley Online Library
… the GaInP/GaAs//GaInAsP/GaInAs structure (left). The bond location, indicated by a double
slash //, is formed between the GaAs and GaInAsP subcells. The GaAs and InP substrates …

GaAsP-GaInAsSb superlattices: A new structure for electronic devices

SM Bedair, T Katsuyama, PK Chiang… - Journal of Crystal …, 1984 - Elsevier
… to a GaAs substrate and thus have potential applications in … Growth conditions were adjusted
to grow GaAsP—GaInAsP … lattice parameter that is matched to the GaAs substrate, and …

Strain‐compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (λ∼ 0.98 μm) grown by gas‐source molecular beam epitaxy

G Zhang, A Ovtchinnikov - Applied physics letters, 1993 - pubs.aip.org
GaAs. Thus strain-compensated InGaAs/GaAsP MQW structures are desirable for device
applications … a series of InGaAs/GaAs quantum well lasers with GaAs barriers which comprised …