… of two types of buried-stripe double-heterostructure (OH) GaInAsP/ InP diode lasers-junction-…
-and report the room-temperature cw operation of JOBS lasers emitting at 1. 21 and 1. 25 J..…

… In this letter, we report the first fabrication of GaIn AsPInP lasers, grown on silicon substrates
emitting at 1.27 IJm using low-pressure MOCVD growth techniques. The most important …

… Abstract-We report the first optical gain measurements on InCaAsP/ InP double heterostructures
with composition corresponding to an emission wavelength of about 1.3 pm at 300 K. At …

… GaInAsP/InP double-heterostructure (DHs), injection lasers could be improved considerably
within the last years, the data reported for the temperature dependence of the laser …

… operation of GaInAsP double heterostructure and multiple quantum well lasers emitting at
1.5 pm … In this work we report a high quality GaInAsP/InP double heterostructure laser grown …

… junction lasers Abstract: This paper describes the growth and characterisation of double
heterostructure multilayers of GalnAsP/lnP for the fabrication of laser diodes emitting near 1-3 …

… is higher than that of InP; hence the design of the thickness of the low InP cladding layer
is important. In this paper, the GaInAsP laser diode on the directly bonded InP/Si substrate is …

… of buried-stripe double-heterostructure GaInAsP/InP diode lasers,” Appl. Phys. Lett., vol. …
measurements on InCaAsP/ InP double heterostructures with composition corresponding …

… We report the first successful preparation of current injection Gain AsP IlnP double heterostructure
lasers operating at 1.3 11m by molecular beam epitaxy. The median threshold current …

… GaInAsP/InP doubleheterostructure diode lasers prepared by liquid-phase epitaxy. These
lasers … -matching between the GaInASP active region and the InP substrate is possible for …