… will introduce the advantages and laser characteristics of GaInAsP/InP surface-emitting (SE)
lasers . In order to obtain the room temperature oscillation of the SE laser diodes, it is very …

… fabricated in epitaxial layers of GaInAsP on InP substrates. Uniform avalanche gains in …
was a GalnAsP/InP laser diode operating at 1. pm, a wavelength at which InP is transparent. …

… bonded InP/Si substrate. We demonstrate both successful crystal growth and lasing operation
at room temperature for a GaInAsP/GaInAsP SCH-MQW structure on a wafer bonded InP/…

… The purpose of this study is to find a suitable etchant for the GaInAsP/InP system, a promising
material for integrated optical circuits in the longer wavelength band. In order to fabricate (A…

… , the Si02 stripes are removed with HF, and a layer of p-InP is grown over the … the GaInAsP
stripes for making contact to the diodes. To make the JDBS lasers, successive p-InP and n-InP …

… GaInAsP laser diode (LD) grown on a directly bonded InP/Si substrate were successfully
obtained. We have fabricated the InP/… GaInAsP/InP double heterostructure layers on this InP/Si …

… compound semiconductors, initially for visible light-emitting diodes, but subsequently for
near infra-red lasers in the GaAs/AlGaAs and GaInAsP alloy systems. He designed and built the …

… of laser diode on silicon and InP substrate. Fabry–Perot GaInAsP bulk laser diode on InP/Si
substrate is successfully obtained to study the optical gain coefficient of laser diode. The …

… In fact, the 16-mA threshold current achieved in this work is already comparable to the
lowest reported to date for the DFB diode lasers.Still lower threshold currents can possibly be …

… Crystal growth on a Si substrate for the fabrication of a 1.2 µm GaInAsP laser diode is
demonstrated via metal organic vapor phase epitaxy and lasing operation in the pulse regime at …