… group-III nitride heterostructures incorporating GaInN/GaN quantum wells (… laser diode will
always be the better light-emitting diode (LED), we root our development of green laser diode …

… a GaInN LED chip is determined by using the thermal resistance and the thermal capacitance
of the substrate and found to be on the order of millisecond (ms). For a GaInN … GaInN LED …

… Finally, we demonstrated the GaInN ridge stripe laser diode with bottom AlInN cladding
layers, showing a threshold current density of 1.15 kA cm −2 at RT under pulsed condition. The …

… mode laser diodes: (1) new data on blue low laser threshold … mode lasers including long
wavelength green laser diodes … of green single mode laser diodes to optimize the devices for …

… The GaInN/GaN multiquantum well (MQW) laser with an … of a GaInN/GaN MQW laser at
room temperature with an emission wavelength of 411nm. We have grown a GaInN/GaN laser …

… shows a schematic diagram of the laser diodes. A 1 .0- ii m … n-GaN optical guiding layer,
GaInN/GaInN multiple quantum well (… In fact, the slope efficiency of laser diodes on Pendeo layer …

… A schematic diagram of a GaInN multiple quantum-well (MQW) LD and the conduction band
… 02N barrier layers; a 40-nmthick GaInN interlayer to relax the strain caused by the presence …

… Furthermore, we succeeded in the first RT‐CW operation of buried‐ridge laser diodes where
the ridge region was buried by a partially crystallized layer of Al 0.6 Ga 0.4 C, cracks in the …

… optimum for GaN/GaInN system LD. … GaInN MQW laser structures in an optical pumping
experiment. We also report the room-temperature pulsed operation of a GaInN MQW laser diode, …

… characteristics of GaInN multiquantum well lasers driven by short, high … Gain-switched nitride
laser diodes (LDs) could represent a … lasers to sub-nanosecond high current driving signals. …