… -heterostructure (OH) GaInAsP/ InP diode lasers-junction-defined (JOBS) and oxidedefined
(OOBS) devices-and report the room-temperature cw operation of JOBS lasers … OOBS lasers …

… ) (As, P)/InP double heterostructure lasers emitting in the wavelength … heterostructure lasers
is also described. Secondly the fabrication of both broad-contact and stripe-geometry lasers …

Double heterostructure and separate confinement heterostructure lasers of Ga x In 1−x As 1−y
P y lattice matched to InP and emitting at 1.5 μm have been grown by molecular beam …

The net gain per unit length ( G ) versus current ( I ) is measured at various temperatures for
1.3 μm InGaAsP-InP double heterostructure lasers. G is found to vary linearly with the current …

… heterostructure (BH) lasers. It is based on a mass transport phenomenon which was recently
observed during the fabrication of integrated laser-… has resulted in BH lasers with threshold …

… GaInAsP/InP double-heterostructure (DHs), injection lasers could be improved considerably
within the last years, the data reported for the temperature dependence of the laser …

… In this letter, we report the first fabrication of GaIn AsPInP lasers, grown on silicon substrates
emitting at 1.27 IJm using low-pressure MOCVD growth techniques. The most important …

The mass-transported buried-heterostructure lasers have been investigated in detail.
Techniques have been developed for fabrication control and wafer characterization. High yield of …

… CW operation of buried-stripe double-heterostructure GaInAsP/InP … lasers,” Appl. Phys.
Lett., vol. … on InCaAsP/ InP double heterostructures with composition corresponding …

… operation of GaInAsP double heterostructure and multiple quantum well lasers emitting at
1.5 pm … In this work we report a high quality GaInAsP/InP double heterostructure laser grown …