… , quantum dot lasers enable substantial performance improvements over quantum well …
broadened gain lead to lasers with low threshold, high continuous wave operating temperature, …

… the valence band of QDs also limits the performance of the lasers. Tunnel injection and p-…
high-performance In (Ga) As undoped and p-doped tunnel injection self-organized QD lasers …

… InGaAs quantum dots are used as an active media of metamorphic InGaAs–InGaAlAs lasers
… ‘Low threshold quantum dot injection laser emitting at 1.9 μm’, Electron. Lett., 1998, 34, pp. …

… performance and reliability, to develop quantum dot optoelectronic devices on Si substrates
for applications in Si photonics. High-performance InGaAs/GaAs quantum dot lasers … dots as …

… characteristics of quantum dot lasers on silicon substrates are also described. With the
incorporation of multiple quantum dot layers as a dislocation filter, we demonstrate lasers with J th …

… High-performance quantum dot QD lasers near 1.3 m were fabricated using four stacks of InAs
QDs embedded within strained InGaAs quantum wells … For a 1.5-mm-long cavity QD laser, …

… microcombs, and semiconductor mode-locked lasers (MLLs). This paper focuses on
quantum dot MLLs (QDMLLs), which currently offer the best efficiency, simplicity, and size. The …

… degrading the high device performance. The low threshold current together with further
improved device characteristics as presented in this paper render quantum-dot lasers promising …

… We demonstrate record performance 1.3 μm InAs quantum dot lasers grown on silicon by
molecular beam epitaxy. Ridge waveguide lasers fabricated from the as-grown material …

… field of semiconductor laser diodes based on self-organized quantum dots (QDs). … laser
diode, high temperature stability, an extended wavelength range on GaAs substrate and high …