… quantum-dot (QD) lasers based on (001) InP substrates have been grown by metalorganic
vapor-phase epitaxy. The narrow ridge waveguide lasers lased up … Lasing spectra at different …

… the room temperature lasing spectra of an InAs/InP Qdash laser … lasing spectra calculated
by identifying the central wavelength at the FWHM of the lasing spectra of a similar InAs/InP …

… is used to investigate the lasing spectrum properties of InAs/InP (113)B quantum dot (QD) …
temperature dependence of lasing spectra of self-assembled InAs/InP quantum dot lasers is …

… The inset represents the EL spectrum at a 80 C temperature. Lasing on the GS is still observed,
thanks to the high gain afforded by the QDs. In this temperature range, the T 0 reduction …

… to lase at the wavelength of 660 nm (1.879 eV) with a FWHM of approximately 1.5 nm (4.3
meV). The lasing spectrum … at a low current density, indicating lasing via the excited states. In …

… inverse external differential quantum efficiency for both facets on the cavity length. b Lasing
wavelength at room temperature as a function of cavity length. Inset is lasing spectra of 0.49 …

… in multimode lasing operation. Although we showed single-mode lasing spectra in Fig. 2,
we also observed multimode lasing in many device chips with diameter of larger than 5 m. …

… (Color online) (a) EL and lasing spectra taken at RT of the … lasing spectra taken at RT in
pulsed mode of the 1-mm-long device for different currents. The resolution of the optical spectrum …

… characteristics of five-stacked InAs QDs lasers based on InP(100) substrate by changing
the temperature and injection current. At low temperature (80 K), the lasing spectra are …

… lasing operation with low threshold current density has been demonstrated on the InP-based …
laser generating continuous lasing spectrum crossing wide spectral width can potentially …