S Arai, N Nishiyama, T Maruyama… - IEEE Journal of …, 2011 - ieeexplore.ieee.org
… GaInAsP/InP membrane semiconductor lasers, one of the most promising candidate light … activities focused on laser preparation on either Si or Si-on-insulator substrate, the findings of …
H Sugiyama, K Uchida, X Han… - Journal of Crystal …, 2019 - Elsevier
… heterostructure (SCH), on a wafer bonded InP/Sisubstrate. We demonstrate both successful crystal … for a GaInAsP/GaInAsP SCH-MQW structure on a wafer bonded InP/Sisubstrate. …
M Razeghi, M Defour, F Omnes, P Maurel… - Applied physics …, 1988 - pubs.aip.org
… of GaInAsPInPlasers, grown on siliconsubstrates emitting … in growing InP and related compounds on Sisubstrates are … symmetry (zinc bIen de for InP and diamond structure for Si); (iii) …
GK Periyanayagam, T Nishiyama… - … status solidi (a), 2018 - Wiley Online Library
… Crystal growth on a Sisubstrate for the fabrication of a 1.2 µm GaInAsPlaser diode is demonstrated via metal organic vapor phase epitaxy and lasing operation in the pulse regime at …
K Mobarhan, C Jelen, E Kolev, M Razeghi - Journal of applied physics, 1993 - pubs.aip.org
… double heterostructure and multiple quantum well lasers emitting at 1.5 pm on Sisubstrate. … a high quality GaInAsP/InP double heterostructure laser grown directly on silicon without the …
GK Periyanayagam, K Shimomura - physica status solidi (a), 2024 - Wiley Online Library
… of laser diode on silicon and InPsubstrate. Fabry–Perot GaInAsP bulk laser diode on InP/Si substrate is successfully obtained to study the optical gain coefficient of laser diode. The …
K Iga, S Uchiyama - Optical and quantum electronics, 1986 - Springer
… the advantages and laser characteristics of GaInAsP/InP surface-emitting (SE) lasers . In order to … The GaInAsP/InP SE laserwafer was grown by a vertical LPE [27]. Five layers, ie n-…
… in epitaxial layers of GaInAsP on InPsubstrates. Uniform … lm GalnAsP/InPlaser which was biased near threshold and … be the rise time of the laser pulse rather than the response time of …