… InP-based materials on a wafer-bonded InP/Si substrate to an epitaxially grown GaInAsP/InP …
These results are very promising for the high-density integration of InP-based LDs as light …

… GaInAsP/InP membrane semiconductor lasers, one of the most promising candidate light …
activities focused on laser preparation on either Si or Si-on-insulator substrate, the findings of …

… heterostructure (SCH), on a wafer bonded InP/Si substrate. We demonstrate both successful
crystal … for a GaInAsP/GaInAsP SCH-MQW structure on a wafer bonded InP/Si substrate. …

… of GaIn AsPInP lasers, grown on silicon substrates emitting … in growing InP and related
compounds on Si substrates are … symmetry (zinc bIen de for InP and diamond structure for Si); (iii) …

… Crystal growth on a Si substrate for the fabrication of a 1.2 µm GaInAsP laser diode is
demonstrated via metal organic vapor phase epitaxy and lasing operation in the pulse regime at …

… double heterostructure and multiple quantum well lasers emitting at 1.5 pm on Si substrate.
… a high quality GaInAsP/InP double heterostructure laser grown directly on silicon without the …

… Since then, some high-performance GaInAsP/ InP lasers … ) GaInAsP/InP DFB lasers grown
directly on grating substrates … 1.3 and 1.55 μm wavelength MQW GaInAsP/InP DFB lasers. …

… of laser diode on silicon and InP substrate. Fabry–Perot GaInAsP bulk laser diode on InP/Si
substrate is successfully obtained to study the optical gain coefficient of laser diode. The …

… the advantages and laser characteristics of GaInAsP/InP surface-emitting (SE) lasers . In
order to … The GaInAsP/InP SE laser wafer was grown by a vertical LPE [27]. Five layers, ie n-…

… in epitaxial layers of GaInAsP on InP substrates. Uniform … lm GalnAsP/InP laser which was
biased near threshold and … be the rise time of the laser pulse rather than the response time of …