… at LPE growth effects of lattice matched to InP substrates for … InP, In053Ga047As, and
In0.75 Ga0.25 As055P045 on … both (100) and (11l)B oriented unmasked InP applications is …

… InP was grown on (001) and (111)B InP substrates by the … (111)B InP substrates at 640—650Cby
the step-cooling technique. Calculated growth rates assuming diffusion limited growth, …

… properties of { 100) InP. Subsequent LPE growth on structured substrates so formed has also
… The nature of epitaxial growth on these structures was found to be dependent on thecrystal …

… The LPE growth of AiGalnAs layers on InP substrates is also … , LPE growth conditions for
the growth of latticematched Alo.481no.52As and AiGaInAs layers on InP substrates, substrate …

… substrate orientation dependence of the growth rate has been studied for the LPE growth of
In~_~Ga~As on InP under various growth … substrate orientation dependence of the growth …

… The realisation in the mid 70s that InP substrates due to lattice matching considerations are
best suited for fibre optic sources and detectors operating in the low-loss wavelength region …

… Prior to LPE growth, about 200nm thick SiO2 film was sputtered to an InP (100) substrate by
RF sputtering, and the … The growth of In0.8Ga0.2P layers were carried out in a conventional …

… : the use of PH 3 ' ' , Sn-In-P solution ' , and an InP cover In an H … LPE growth processes.
The ~atter case in particular, that is, the use of an InP cover in close proximity with InP substrate …

… the substrate, apparently due to a rapid in-diffusion of gallium. This is analogous to an effect
seen by previous workers during LPE growth of Ga1 _~In~Sbon InSb substrates. … that InP in …

… The half widths for the quaternary and InP substrate are 60 and 10 s, respectively. The
mismatch ia/a is almost the same, 1.60 x iO~,as compared with the bulk layer, resulting in almost …