[图书][B] The MOCVD Challenge: A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications

M Razeghi - 2010 - taylorfrancis.com
Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive
review covering GaInAsP-InP, GaInAsP-GaAs, and related material for electronic and …

[图书][B] The MOCVD Challenge: Volume 2: A Survey of GaInAsP-GaAs for photonic and electronic device applications

M Razeghi - 1995 - taylorfrancis.com
… focus on GaAs and other arsenides grown by MOCVD, whereas … conveys much more than
MOCVD growth of GaAs. Based on … In this volume, the MOCVD growth of GaAs and related …

MOCVD of Compound Semiconductor Layers

E Veuhoff - 1995 - books.google.com
… generator to long term reproducible growth of GaInAsP layers, however, has still to … MOCVD
growth lattice matched on GaAs and InP substrates; for GaAs based material, not only GaAs

Effect of growth conditions at MOCVD on thickness uniformity of GaInAsP epilayers obtained on InP

AE Marichev, RV Levin, BV Pushnyii… - Journal of Physics …, 2018 - iopscience.iop.org
… ] for GaAsP solid solutions grown on GaAs. As regards GaInAsP lattice-matched to InP, there
are well-researched methods of its growing by MOCVD at reduced pressure in the range of …

MOCVD technology for the production of highly efficient GaAlP/GaAs/Ge solar cells

R Beccard, H Protzmann, DA Schmitz… - Optoelectronic …, 1998 - spiedigitallibrary.org
… growth of GaAs, A1GaAs, … GaInAsP was grown on 2" InP. Since this material is very temperature
sensitive, this is the ultimate homogeneity proof. The wavelength distribution of GaInAsP

Tunable bandgap GaInAsP solar cells with 18.7% photoconversion efficiency synthesized by low-cost and high-growth rate hydride vapor phase epitaxy

N Jain, J Simon, KL Schulte… - IEEE Journal of …, 2018 - ieeexplore.ieee.org
… -matched GaInAsP epitaxial films on a GaAs substrate by D-… In comparison with the best
MOCVD-grown GaInAsP solar … VOC in MOCVD grown solar cells (1.18 V by MOCVD compared …

Investigation of the effect of doping on transition layers of anisotype GaInAsP and InP heterostructures obtained by the method of MOCVD

GS Gagis, VI Vasil'ev, RV Levin, AE Marichev… - Technical Physics …, 2020 - Springer
… by the method of metal organic chemical vapor deposition (MOCVD), we have found earlier
[3] … The heterostructures studied in this work were made on an AIX200 apparatus for MOCVD

GaAsP/InGaP heterojunction bipolar transistors for III-V on Si microelectronics

C Heidelberger - 2017 - dspace.mit.edu
… In addition, by substituting GaAsxP1−x (0.8 < 𝑥 < 1) for GaAs as an active material, we can
MOCVD used in this thesis. ..................... 31 Figure 2.2: Simplified schematic of the MOCVD

Large-scale MOVPE production systems

H Jürgensen - Microelectronic engineering, 1992 - Elsevier
… An overview on GaAIAs/GaAs HEMT data achieved in industrial laboratories will be given
also … Heyen, LP-MOCVD of GaAs/AIGaAs heterostructures for solar cells and photocathodes, …

Growth and characterization of quaternary (GaInAsP-GaAs) graded heterostructures

M Rathi, P Dutta, SP Ahrenkie - 2012 38th IEEE Photovoltaic …, 2012 - ieeexplore.ieee.org
GaAs using MOCVD on (001) oriented substrates are analyzed. The epitaxial layer composition
is varied from GaAs … growth of LMM alloys on GaAs with special emphasis on quaternary …