… of Volumes 1 and 2 of The MOCVD Challenge. The first volume started with an … InP and its
related compounds. At the time, many publishers had asked me to write a book about MOCVD…

… Structures were grown on InP(100):Sn substrates misoriented on 4 and with … InP buffer layers
were formed before GaInAsP layers deposition, the molar flows of the precursors during InP …

… solutions that are isoperiodic with InP can serve as materials … organic chemical vapor
deposition (MOCVD), we have found … AIX200 apparatus for MOCVD on InP(100) : S and InP(100) : …

… O-1.65 pm GaInAsP-In]' electrooptical devices become more widely used … LP-MOCVD
offers advantages of smooth uniform surfaces, sharp interfaces (lower than 10 A for GaInAsP/InP), …

… versatility of the MOCVD technology are highlighted … MOCVD efforts have taken place in
III-V material systems, mainly GaAs and InP based materials, for example, AlGaAs and GaInAsP, …

… ” and 4” InP substrates by low pressure Metalorganic Chemical Vapor Deposition (MOCVD)
in … High quality, lattice matched InP/GaInAs epitaxial layers were grown and we demonstrate …

… of InP on Si with a thin GaAs or Growth was performed using a horizontal GaAs/GaInAsP …
reported for the GaAs-on-Si heteroepitaxial film step MOCVD growth of InP directly on Si. An …

… challenges of these complex QCL structures; describe the metalorganic vapor phase epitaxy
growth of AlInAs/GaInAs/InP … Goldstein, “Lateral modulations in zero-net-strained GaInAsP …

… The realization of semiconductor lasers on silicon is a particularly challenging task. … GaIn
AsPInP lasers, grown on silicon substrates emitting at 1.27 IJm using low-pressure MOCVD …

… , it is GaInAsP solid solutions lattice-matched to InP that … use of a system of GaInAsP solid
solutions obtained on an InP … The GaInAsP and InP materials investigated in this study have …