A Polman - Journal of applied physics, 1997 - pubs.aip.org
… Rare-earth ions, specifically erbium, have played an important role in the development … ions can reduce the gain performance of the amplifier. In order to synthesize and optimize planar …
… 2 Silica–hafnia planar waveguides Erbium doped planar waveguides can be used for signal amplification (at a wavelength of \(1.55~\upmu \hbox {m}\)) in the same way as in the erbium …
RR Gonçalves, G Carturan, M Montagna, M Ferrari… - Optical Materials, 2004 - Elsevier
… ratio but different molar percentages oferbiumion; their nominal doping concentrations are … the 4 I 13/2 level ofEr 3+ ions in the 70SiO 2 –30HfO 2 planar waveguides, obtained by a fit …
… → 4 I 15/2 emission at 1.53 μm of the erbiumions in an amorphous environment was clearly observed and resulted to not be influenced by the heat-treatment at 400 C, confirming the …
… sensitization concepts for optically active erbiumions are reviewed: 1) … Currently, planar photonic integrated circuits are being … The planar amplifier is an important component in planar …
A Chiasera, M Ferrari, L Zampedri… - … Optics and Photonic …, 2004 - spiedigitallibrary.org
… not change practically with the hafnium and erbium content. The 4 I 13… The emission of 4 I 13/2 -> 4 I 15/2 ofEr 3+ ion transition was … efficiency ofEr 3+ ions by co-doping with Yb 3+ ions. …
JC Bozelli, LAO Nunes, FA Sigoli… - Journal of the American …, 2010 - Wiley Online Library
… In this mechanism, a second photon promotes the erbiumion to the 4 F 9/2 level by the resonant absorption of the excited state 4 I 13/2 . This extra mechanism, to populate 4 F 9/2 …
… the erbium-doped fiber amplifier. Because the need for faster chips is expected to see a shift from electronics- to photonics-based technologies, erbiumions … nitride photonic integrated …