… for n-type porous Ge formation. In this paper, we show that by using bipolar potentiostatic
etching, porous Ge with the thickness of more than 100 nm and the pore diameter in the range …

… growth of electrochemically etched pores in Germanium (Ge) … In particular, pores could be
obtained in p-type Ge samples. … 9a shows the “worst” case: Potentiostatic etching at 2 V on a …

… Pore formation by anodic etching in germanium leads to a constant dissolution of the porous
… The potentiostat Elypor 3 from the company ET&TE Etch and Technology GmbH allowed …

… To investigate the sensing performance of the single porous germanium layer fabricated
by BEE, critical parameters such as the physical thickness and the refractive index (or …

… profiles in either galvanostatic–potentiostatic mode and in anodic or cathodic bias conditions.
… of the substrate and the etching current density on the porosity of the porous layers. The …

… A specific interest has been devoted to porous Germanium (PGe) due to its unique
characteristics, opening exciting avenues for high-performance devices in diverse domains, such as …

… Porous Germanium (PGe) has emerged as a promising material for applications such as …
measured using a BioLogic® SP-50 Potentiostat. Subsequently, image processing was carried …

… In this paper, we experimentally demonstrate etching and lift-off of porous Ge layers with a …
profiles in either galvanostatic or potentiostatic mode and in anodic or cathodic bias conditions…

… profiles in either galvanostatic or potentiostatic mode and in anodic or cathodic bias conditions.
After anodizing, samples are rinsed in de-ionized water and dried under N2 stream. The …

… The formation of porous germanium (PGe) has been not intensively studied and only a few
… and characterization of porous germanium layers by means of electrochemical etching. The …