… In this paper, we present a high-efficiency, linear power amplifier utilizing source degeneration
inductors and lowloss parallel output power combiner. The schematic of the amplifier …

… This paper presents a two stage highly efficient and linear CMOS power amplifier using a
standard 40 nm CMOS process. The fabricated power amplifier demonstrates suitable linearity, …

… E-band PA in 40-nm bulk CMOS that utilizes a novel neutralized bootstrapped cascode
amplifier (NBCA) topology to enhance both the power gain and the output power while ensuring …

… combiner then becomes the key to further extend the power level of millimeter-wave … in
40-nm bulk CMOS technology that utilizes a broadband four-way differential parallel-series power …

… 60-GHz power amplifier (PA) in 40-nm CMOS. The proposed technique is used to mitigate
the amplitude to phase modulation (AM–PM) distortion caused by the nonlinear input …

… power amplifier (PA) is implemented in 40-nm bulk CMOS technology. To boost the amplifier
… while the neutralized amplifier stage is co-optimized with input transformer to improve the …

… standard 40-nm CMOS technology. The first design achieved 16.2-dBm output power with a
… His main research focus has been on CMOS RF power amplifiers and analog circuit design …

… The power amplifier was designed with using Global Foundries 45nm SOI CMOS process
… In the 4-stacked FET PA, each FET is 160µm wide with a 40nm gate length. For the highest …

… This paper presents an 80 GHz Doherty power amplifier in 40 nm CMOS technology. The
amplifier combines 4 push-pull amplifiers by using 2x2 parallel-series combiner. In addition, it …

… To improve the efficiency of power amplifiers (PA), the trend is towards Class-AB and Class-…
At the same time, PMOS transistors become attractive in nanometer CMOS as their f MAX …